Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4PC40SPBF

IGBT 600V 60A 160W TO247AC

4.81

ON Semiconductor HGTG20N60A4

IGBT 600V 70A 290W TO247

4.8

Infineon Technologies IGW50N60TPXKSA1

IGBT 600V 80A TO247-3

4.77

ON Semiconductor HGTG18N120BND

IGBT 1200V 54A 390W TO247

4.75

STMicroelectronics STGW40V60DF

IGBT 600V 80A 283W TO247

4.65

Infineon Technologies IGW15N120H3FKSA1

IGBT 1200V 30A 217W TO247-3

4.57

Infineon Technologies IGW30N65L5XKSA1

IGBT 650V 30A TRENCHSTOP TO247-3

4.57

STMicroelectronics STGW35HF60WDI

IGBT 600V 60A 200W TO-247

4.56