Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4PH40UPBF

IGBT 1200V 41A 160W TO247AC

5.22

ON Semiconductor SGL50N60RUFDTU

IGBT 600V 80A 250W TO264

5.1

ON Semiconductor FGH75T65SHD-F155

IGBT 650V 150A 455W TO-247

5.09

Infineon Technologies IKW50N65F5FKSA1

IGBT 650V 80A 305W PG-TO247-3

5.04

Infineon Technologies IHW50N65R5XKSA1

IGBT 650V 80A 282W TO247

4.96

Infineon Technologies IRG4PC40FPBF

IGBT 600V 49A 160W TO247AC

4.94

Infineon Technologies IKW30N60TFKSA1

IGBT 600V 60A 187W TO247-3

4.93

Infineon Technologies IHW30N110R3FKSA1

IGBT 1100V 60A 333W TO247-3

4.93