Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IHW20N65R5XKSA1

IGBT 650V 40A 150W TO247

3.45

ON Semiconductor FGA20S140P

IGBT 1400V 40A 272W TO-3PN

3.4

STMicroelectronics STGW30M65DF2

TRENCH GATE FIELD-STOP IGBT M SE

3.39

Infineon Technologies IGW30N60TPXKSA1

IGBT 600V 53A TO247-3

3.37

Infineon Technologies IRG4PH20KPBF

IGBT 1200V 11A 60W TO247AC

3.36

Infineon Technologies IKP20N60TXKSA1

IGBT 600V 40A 166W TO220-3

3.28

ON Semiconductor FGH40T65UPD

IGBT 650V 80A 268W TO-247AB

3.18

STMicroelectronics STGW35HF60W

IGBT 600V 60A 200W TO247

3.14