Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4BC20KDSTRLP

IGBT 600V 16A 60W D2PAK

0

STMicroelectronics STGF7H60DF

IGBT 600V 14A 24W TO-220FP

1.75

STMicroelectronics STGF14NC60KD

IGBT 600V 11A 28W TO220FP

1.67

STMicroelectronics STGP7NC60HD

IGBT 600V 25A 80W TO220

1.61

STMicroelectronics STGP14NC60KD

IGBT 600V 25A 80W TO220

1.61

Infineon Technologies IGB30N60H3ATMA1

IGBT 600V 60A 187W TO263-3

0

STMicroelectronics STGF10NC60KD

IGBT 600V 9A 25W TO220FP

1.3

STMicroelectronics STGP6M65DF2

TRENCH GATE FIELD-STOP IGBT M SE

1.18