Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGW20V60DF

IGBT 600V 40A 167W TO247

3.06

ON Semiconductor HGTG10N120BND

IGBT 1200V 35A 298W TO247

3.04

STMicroelectronics STGP40V60F

IGBT 600V 80A 283W TO220AB

2.89

Infineon Technologies IRG4BC30SPBF

IGBT 600V 34A 100W TO220AB

3

Infineon Technologies IRG4BH20K-SPBF

IGBT 1200V 11A 60W D2PAK

2.88

Infineon Technologies IRGS30B60KTRRP

IGBT 600V 78A 370W D2PAK

0

Infineon Technologies IRG4BC30KDSTRLP

IGBT 600V 28A 100W D2PAK

0

ON Semiconductor ISL9V5045S3ST

IGBT 480V 51A 300W D2PAK

0