Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG7PH50K10DPBF

IGBT 1200V 90A 400W TO247AC

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ON Semiconductor NGTB30N60FLWG

IGBT 600V 60A 250W TO247

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ON Semiconductor NGTB30N120IHRWG

IGBT 1200V 60A 384W TO247

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Infineon Technologies IRGS4064DPBF

IGBT 600V 20A 101W D2PAK

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Infineon Technologies IRGP4640-EPBF

IGBT 600V 65A 250W TO247AD

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Infineon Technologies IRGP4630DPBF

IGBT 600V 47A 206W TO247AC

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Infineon Technologies IRGP4630D-EPBF

IGBT 600V 47A 206W TO247AD

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Infineon Technologies IRG7PH46U-EP

IGBT 1200V 108A TO247

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