Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

Infineon Technologies IRG7PH42UD1-EP

IGBT 1200V 85A COPAK247

0

Infineon Technologies IRG7PH35U-EP

IGBT 1200V 55A TO247

0

Infineon Technologies IRGP6650DPBF

IGBT 600V 80A 306W TO247AC

0

Infineon Technologies IRGP6640DPBF

IGBT 600V 53A 200W TO247AC

0

Infineon Technologies IRGP6630DPBF

IGBT 600V 47A 192W TO247AC

0

Infineon Technologies IRG8P15N120KD-EPBF

IGBT 1200V 30A 125W TO-247AD

0

Infineon Technologies IRG8P08N120KD-EPBF

IGBT 1200V 15A 89W TO-247AD

0

Infineon Technologies IRG8P60N120KDPBF

IGBT 1200V 100A 420W TO-247AC

0