Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor NGTB15N120IHWG

IGBT 15A 1200V TO-247

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ON Semiconductor NGTB50N60FL2WG

IGBT 600V 50A TO247

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ON Semiconductor NGTB15N120IHTG

IGBT 1200V 15A BIPOLAR TO247

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Infineon Technologies IRG7CH20K10EF

IGBT 1200V DIE

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Infineon Technologies IRG7CH11K10EF

IGBT 1200V DIE

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Renesas Electronics America RJP4301APP-M0#T2

IGBT 430V TO200FL

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Infineon Technologies IRG7PK35UD1MPBF

IGBT 1200V ULTRA FAST TO247

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Infineon Technologies IRG7PH50U-EP

IGBT 1200V ULTRA FAST TO247

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