Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGK120N120A3

IGBT 1200V 240A 830W TO264

25.19

IXYS IXBH12N300

IGBT 3000V 30A 160W TO247

24.32

Infineon Technologies IRGPS60B120KDP

IGBT 1200V 105A 595W SUPER247

22.5

IXYS IXYK120N120C3

IGBT 1200V 240A 1500W TO264

21.65

Infineon Technologies IRG4PSC71KDPBF

IGBT 600V 85A 350W SUPER247

21.43

IXYS IXGH32N170

IGBT 1700V 75A 350W TO247AD

18.43

Infineon Technologies AIKQ120N60CTXKSA1

IC DISCRETE 600V TO247-3

13.69

ON Semiconductor FGY160T65SPD-F085

650V FS GEN3 TRENCH IGBT

12.24