Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG4PH50UPBF

IGBT 1200V 45A 200W TO247AC

6.34

Infineon Technologies IRG4PC40FDPBF

IGBT 600V 49A 160W TO247AC

6.32

Infineon Technologies IGW25N120H3FKSA1

IGBT 1200V 50A 326W TO247-3

5.78

Infineon Technologies IRG4BC40W-SPBF

IGBT 600V 40A 160W D2PAK

4.15

ON Semiconductor FGH40T65SPD-F155

IGBT 650V 80A 267W TO-247

3.2

STMicroelectronics STGW19NC60HD

IGBT 600V 42A 140W TO247

2.78

Infineon Technologies IKB40N65ES5ATMA1

40A 650V TRENCHSTOP5 MEDIUM SPEE

0

Infineon Technologies SGP02N120XKSA1

IGBT 1200V 6.2A 62W TO220-3

2.21