Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGM25N100A

POWER MOSFET TO-3

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IXYS IXGM17N100A

POWER MOSFET TO-3

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Infineon Technologies IRGS4B60KPBF

IGBT 600V D2PAK-3

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ON Semiconductor SGTB11N60R2DT4G

RC2 IGBT 10A 600V DPAK

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ON Semiconductor FGH75T65SQDT_F155

650V FS4 TRENCH IGBT

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ON Semiconductor ISL9V5036S3ST_SB82170

INTEGRATED CIRCUIT

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ON Semiconductor ISL9V5036S3ST_SB82026C

INTEGRATED CIRCUIT

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ON Semiconductor FGD3040G2_SN00297

INTEGRATED CIRCUIT

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