Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG7PH42UD-EPBF

IGBT 1200V ULTRA FAST TO247

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Infineon Technologies IRGIB4620DPBF

IGBT 600V 32A 140W TO220

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Infineon Technologies IRGSL15B60KDPBF

IGBT 600V 31A 208W TO262

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Infineon Technologies IRGR4610DTRPBF

IGBT 600V 16A 77W DPAK

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Renesas Electronics America RJP65T54DPM-A0#T2

IGBT TRENCH 650V 60A TO-3PFP

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Renesas Electronics America RJH65T47DPQ-A0#T0

IGBT TRENCH 650V 90A TO247A

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Renesas Electronics America RJH65T46DPQ-A0#T0

IGBT TRENCH 650V 80A TO247A

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Infineon Technologies AUIRG4PH50S-205

IGBT 1200V TO247-3

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