Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
ON Semiconductor FGD4536TM_SN00306
IGBT 360V 125W DPAK
0
STMicroelectronics STGF3HF60HD
IGBT 600V 7.5A TO220FP
0
STMicroelectronics STGB3HF60HD
IGBT 600V 7.5A D2PAK
0
ON Semiconductor NGTB75N65FL2WAG
IGBT FIELD STOP 650V TO247-4
0
ON Semiconductor NGTB50N65S1WG
IGBT TRENCH 650V 140A TO247
0
ON Semiconductor NGTB50N65FL2WAG
IGBT FIELD STOP 650V TO247-4
0
ON Semiconductor NGTB40N65IHRWG
IGBT FIELD STOP 650V 80A TO247
0
ON Semiconductor NGTB25N120FL2WAG
IGBT FIELD STOP 1.2KV TO247-4
0