Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

---

Infineon Technologies IRGP4263D1PBF

IGBT 600V TO247 COPAK

0

Infineon Technologies IRGP4269D-EPBF

IGBT 600V TO247 COPAK

0

Infineon Technologies IRGPS47160DPBF

IGBT 600V TO247 COPAK

0

Infineon Technologies IRGIB4615DPBF

IGBT 600V FULLPAK220 COPAK

0

Infineon Technologies IRGIB4610DPBF

IGBT 600V FULLPAK220 COPAK

0

Infineon Technologies IRGIB4607DPBF

IGBT 600V FULLPAK220 COPAK

0

Infineon Technologies IRGH4607DPBF

IGBT 600V 8PQFN

0

Infineon Technologies IRGH4610DPBF

IGBT 600V 8PQFN

0