Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Renesas Electronics America RJH60A81RDPD-A0#J2

IGBT 600V 5A

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Renesas Electronics America RJH60A01RDPD-A0#J2

IGBT 600V 5A

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Infineon Technologies IRGSL4640DPBF

DIODE 600V 24A COPAK-262

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Infineon Technologies IRGS4640DPBF

DIODE 600V 40A D2PAK

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Infineon Technologies IRGB4640DPBF

DIODE 600V 40A TO-220

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Infineon Technologies IRG8B08N120KDPBF

DIODE 1200V 8A TO-220

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Infineon Technologies AUIRGU4045D

DIODE 600V IGBT

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Infineon Technologies AUIRGF76524D0

DIODE IGBT 680V 24A TO-247AD

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