Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG7CH35UEF

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH35UED

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH28UEF

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH28UED

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH23K10EF

IGBT 1200V DIE

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Renesas Electronics America RJP4009ANS-01#Q6

IGBT 400V

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Renesas Electronics America RJH60D1DPP-E0#T2

IGBT 600V 10A

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Renesas Electronics America RJH60A83RDPD-A0#J2

IGBT 600V 10A

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