Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
Infineon Technologies IRG7CH73K10EF-R
IGBT 1200V ULTRA FAST DIE
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Infineon Technologies IRG7CH73K10EF
IGBT 1200V ULTRA FAST DIE
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Infineon Technologies IRG7CH50UEF
IGBT 1200V ULTRA FAST DIE
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Infineon Technologies IRG7CH50UED
IGBT 1200V ULTRA FAST DIE
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Infineon Technologies IRG7CH46UED
IGBT 1200V ULTRA FAST DIE
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Infineon Technologies IRG7CH46UEF
IGBT 1200V ULTRA FAST DIE
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Infineon Technologies IRG7CH42UED
IGBT 1200V ULTRA FAST DIE
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Infineon Technologies IRG7CH42UEF
IGBT 1200V ULTRA FAST DIE
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