Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.


ON Semiconductor TIG074E8-TL-H

IGBT 400V 150A 8ECH

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ON Semiconductor TIG056BF-1E

IGBT 430V 240A 30W TO-220F-3FS

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ON Semiconductor NGTG50N60FLWG

IGBT 600V 50A TO247

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ON Semiconductor NGTB75N60FL2WG

IGBT 600V 75A TO247

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ON Semiconductor NGTB50N60FLWG

IGBT 600V 50A TO247

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ON Semiconductor NGTB40N60IHLWG

IGBT 600V 40A TO247

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ON Semiconductor NGTB40N120LWG

IGBT 1200V 40A TO247

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ON Semiconductor NGTB40N120IHLWG

IGBT 1200V 40A TO247

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