Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IGW30N100TFKSA1

IGBT 1000V 60A 412W TO247-3

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Microsemi Corporation APT50GP60LDLG

IGBT 600V 150A 625W TO264

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Microsemi Corporation APT30GS60KRG

IGBT 600V 54A 250W TO220

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STMicroelectronics STGW30H60DF

IGBT 600V 60A 260W TO247

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Microsemi Corporation APT40GR120B2SCD10

IGBT 1200V 88A 500W TO247

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Microsemi Corporation APT25GR120SSCD10

IGBT 1200V 75A 521W D3PAK

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Microsemi Corporation APT25GR120BSCD10

IGBT 1200V 75A 521W TO247

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Renesas Electronics America RJP4010AGE-00#P5

IGBT 400V 1.6W TSOJ8

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