Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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ON Semiconductor NGTG30N60FLWG

IGBT 600V 60A 250W TO247

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ON Semiconductor NGTB50N60FWG

IGBT 600V 100A 223W TO247

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ON Semiconductor NGTB40N60FLWG

IGBT 600V 80A 257W TO247

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ON Semiconductor NGTB30N60FWG

IGBT 600V 60A 167W TO247

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Infineon Technologies IRGP4266D-EPBF

IGBT 650V 140A 455W TO247AD

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STMicroelectronics STGWA30N120KD

IGBT 1200V 60A 220W TO247

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Infineon Technologies IRG4RC10UTRPBF

IGBT 600V 8.5A 38W DPAK

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Infineon Technologies IRG4BC30S-STRLP

IGBT 600V 34A 100W D2PAK

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