Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Renesas Electronics America RJH1CV7DPQ-E0#T2

IGBT 1200V 70A 320W TO247

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Renesas Electronics America RJH1CM5DPQ-E0#T2

IGBT 1200V 30A 245W TO247

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Renesas Electronics America RJH1CF5RDPQ-80#T2

IGBT 1200V 50A 192.3W TO247

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Renesas Electronics America RJH1CF4RDPQ-80#T2

IGBT 1200V 40A 156.2W TO247

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Renesas Electronics America RJH1BF6RDPQ-80#T2

IGBT 1100V 55A 227.2W TO247

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Infineon Technologies IRG7PH42UD1MPBF

IGBT 1200V 85A 313W TO247AD

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Infineon Technologies IRGR2B60KDPBF

IGBT 600V 6.3A 35W DPAK

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Infineon Technologies IRGP4266PBF

IGBT 650V 140A 450W TO247AC

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