Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.


NXP USA Inc. BFG94,115

RF TRANS NPN 12V 6GHZ SOT223

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NXP USA Inc. BFR505T,115

RF TRANS NPN 15V 9GHZ SC75

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NXP USA Inc. BFG67,215

RF TRANS NPN 10V 8GHZ SOT143B

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NXP USA Inc. BFG67,235

RF TRANS NPN 10V 8GHZ SOT143B

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NXP USA Inc. BFG520W,115

RF TRANS NPN 15V 9GHZ 4SO

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NXP USA Inc. BFR94A,215

RF TRANS NPN 15V 5GHZ TO236AB

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NXP USA Inc. BFG10/X,215

RF TRANS NPN 8V 1.9GHZ SOT143B

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NXP USA Inc. BFG10,215

RF TRANS NPN 8V 1.9GHZ SOT143B

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