Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.


NXP USA Inc. BFG92A/X,215

RF TRANS NPN 15V 5GHZ SOT143B

0

NXP USA Inc. BFG93A/X,215

RF TRANS NPN 12V 6GHZ SOT143B

0

NXP USA Inc. BFU520YF

RF TRANS 2 NPN 12V 10GHZ SOT363

0.23

NXP USA Inc. BFS25A,115

RF TRANS NPN 5V 5GHZ SOT323-3

0.21

NXP USA Inc. BFU550WF

RF TRANS NPN 12V 11GHZ SOT323-3

0.14

NXP USA Inc. BFU550XVL

RF TRANS NPN 12V 11GHZ SOT143B

0.12

NXP USA Inc. BFU550VL

RF TRANS NPN 12V 11GHZ SOT143B

0.12

NXP USA Inc. BFU530AVL

RF TRANS NPN 12V 11GHZ TO236AB

0.12