Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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NXP USA Inc. BFU530XRVL

RF TRANS NPN 12V 11GHZ SOT143R

0.12

NXP USA Inc. BFU530XVL

RF TRANS NPN 12V 11GHZ SOT143B

0.12

NXP USA Inc. BFU530WF

RF TRANS NPN 12V 11GHZ SOT323-3

0.12

NXP USA Inc. BFU530VL

RF TRANS NPN 12V 11GHZ SOT143B

0.12

NXP USA Inc. BFU520XRVL

RF TRANS NPN 12V 10.5GHZ SOT143R

0.12

NXP USA Inc. BFU520AVL

RF TRANS NPN 12V 10GHZ TO236AB

0.12

NXP USA Inc. BFU520XVL

RF TRANS NPN 12V 10.5GHZ SOT143B

0.1

NXP USA Inc. BFU520VL

RF TRANS NPN 12V 10.5GHZ SOT143B

0.1