Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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ROHM Semiconductor 2SC4713KT146R

RF TRANS NPN 6V 800MHZ SMT3

0.09

ON Semiconductor SMMBTH10-4LT3G

RF TRANS NPN 25V 800MHZ SOT23-3

0.09

Toshiba Semiconductor and Storage 2SC5108-Y,LF

RF TRANS NPN 10V 6GHZ SSM

0

ROHM Semiconductor 2SC4098T106P

RF TRANS NPN 25V 300MHZ UMT3

0

Infineon Technologies BF771E6327HTSA1

RF TRANS NPN 12V 8GHZ SOT23-3

0.09

Panasonic Electronic Components DMC506E20R

RF TRANS 2 NPN 20V 650MHZ SOT363

0.09

Toshiba Semiconductor and Storage 2SC5086-Y,LF

RF TRANS NPN 12V 7GHZ SSM

0

Infineon Technologies BFP182WH6327XTSA1

RF TRANS NPN 12V 8GHZ SOT343-4

0.08