Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFR360FH6765XTSA1

RF TRANS NPN 9V 14GHZ TSFP-3

0.08

Infineon Technologies BFR380L3E6327XTMA1

RF TRANS NPN 9V 14GHZ TSLP-3-1

0

Infineon Technologies BFR380FH6327XTSA1

RF TRANS NPN 9V 14GHZ TSFP-3

0

Infineon Technologies BFS 17P E6433

RF TRANS NPN 15V 1.4GHZ SOT23-3

0.06

ON Semiconductor SS9018FBU

RF TRANS NPN 15V 1.1GHZ TO92-3

0.03

Toshiba Semiconductor and Storage MT3S111TU,LF

RF SIGE NPN BIPOLAR TRANSISTOR N

0

Toshiba Semiconductor and Storage 2SC5084-O(TE85L,F)

RF TRANS NPN 12V 7GHZ SMINI

0

Toshiba Semiconductor and Storage 2SC5065-O(TE85L,F)

RF TRANS NPN 12V 7GHZ USM

0