Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
ON Semiconductor NSVF5488SKT3G
BIP NPN 70MA 10V FT=7G
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ON Semiconductor NSVF5490SKT3G
RF-TR 10V 30MA FT=8G NPN
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Toshiba Semiconductor and Storage 2SC4215-O(TE85L,F)
RF TRANS NPN 30V 550MHZ USM
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Toshiba Semiconductor and Storage 2SC5095-R(TE85L,F)
RF TRANS NPN 10V 10GHZ SC70
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ON Semiconductor NSVF4009SG4T1G
RF TRANS NPN 3.5V 25GHZ SC82FL/
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NXP USA Inc. BFU760F,115
RF TRANS NPN 2.8V 45GHZ 4DFP
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NXP USA Inc. BFU768F,115
RF TRANS NPN 2.8V 70MA 4DFP
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NXP USA Inc. BFU520XAR
RF TRANS NPN 12V 10.5GHZ SOT143B
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