Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Toshiba Semiconductor and Storage MT3S20TU(TE85L)

RF TRANS NPN 12V 7GHZ UFM

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ON Semiconductor MCH4015-TL-H

RF TRANS NPN 12V 10GHZ 4MCPH

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ON Semiconductor MCH4020-TL-H

RF TRANS NPN 8V 16GHZ 4MCPH

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NXP USA Inc. ON5089,115

RF TRANSPONDER SOT343F

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NXP USA Inc. ON5087,115

RF TRANSPONDER SOT343F

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ON Semiconductor NSVMMBTH10LT1G

RF TRANS NPN 25V 650MHZ SOT23

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Toshiba Semiconductor and Storage 2SC5065-Y(TE85L,F)

RF TRANS NPN 12V 7GHZ USM

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Toshiba Semiconductor and Storage 2SC4215-Y(TE85L,F)

RF TRANS NPN 30V 550MHZ USM

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