Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

---

Toshiba Semiconductor and Storage MT3S16U(TE85L,F)

RF TRANS NPN 5V 4GHZ USM

0

ON Semiconductor 55GN01MA-TL-E

RF TRANS NPN 10V 5.5GHZ 3MCP

0

ON Semiconductor 15GN03MA-TL-E

RF TRANS NPN 10V 1.5GHZ 3MCP

0

Toshiba Semiconductor and Storage 2SC2714-Y(TE85L,F)

RF TRANS NPN 30V 550MHZ SMINI

0

ON Semiconductor 15GN03CA-TB-E

RF TRANS NPN 10V 1.5GHZ 3CP

0

Infineon Technologies BFR182WH6327XTSA1

RF TRANS NPN 12V 8GHZ SOT323-3

0

Toshiba Semiconductor and Storage 2SC2714-O(TE85L,F)

RF TRANS NPN 30V 550MHZ SMINI

0

ON Semiconductor MMBTH10LT3G

RF TRANS NPN 25V 650MHZ SOT23-3

0