Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFS17WH6327XTSA1

RF TRANS NPN 15V 1.4GHZ SOT323-3

0

Infineon Technologies BFS17PE6327HTSA1

RF TRANS NPN 15V 1.4GHZ SOT23-3

0

Renesas Electronics America Inc. HFA3127RZ

RF TRANS 5 NPN 12V 8GHZ 16QFN

10.13

Toshiba Semiconductor and Storage MT3S111P(TE12L,F)

RF TRANS NPN 6V 8GHZ PW-MINI

0

ON Semiconductor KSC1674YBU

RF TRANS NPN 20V 600MHZ TO92-3

0.3

Toshiba Semiconductor and Storage MT3S113(TE85L,F)

RF TRANS NPN 5.3V 12.5GHZ SMINI

0

Toshiba Semiconductor and Storage MT3S113TU,LF

RF TRANS NPN 5.3V 11.2GHZ UFM

0

ON Semiconductor NSVF4015SG4T1G

RF TRANS NPN 12V 10GHZ SC82FL/

0