Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFS483H6327XTSA1

RF TRANS 2 NPN 12V 8GHZ SOT363-6

0

Infineon Technologies BFS481H6327XTSA1

RF TRANS 2 NPN 12V 8GHZ SOT363-6

0

Toshiba Semiconductor and Storage MT3S111(TE85L,F)

RF TRANS NPN 6V 11.5GHZ SMINI

0

ON Semiconductor KSP10BU

RF TRANS NPN 25V 650MHZ TO92-3

0.24

NXP USA Inc. BFT25A,215

RF TRANS NPN 5V 5GHZ TO236AB

0

Infineon Technologies BFP540ESDH6327XTSA1

RF TRANS NPN 5V 30GHZ SOT343-4

0

NXP USA Inc. BFU550R

RF TRANS NPN 12V 11GHZ SOT143B

0

ON Semiconductor SS9018GBU

RF TRANS NPN 15V 1.1GHZ TO92-3

0.2