Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFP620H7764XTSA1

RF TRANS NPN 2.8V 65GHZ SOT343-4

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NXP USA Inc. BFU550WX

RF TRANS NPN 12V 11GHZ SOT323-3

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Infineon Technologies BFP740FESDH6327XTSA1

RF TRANS NPN 4.7V 47GHZ 4TSFP

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Infineon Technologies BFP740FH6327XTSA1

RF TRANS NPN 4.7V 42GHZ 4TSFP

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NXP USA Inc. BFU550XAR

RF TRANS NPN 12V 11GHZ SOT143B

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Infineon Technologies BFP640FH6327XTSA1

RF TRANS NPN 4.5V 40GHZ 4TSFP

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NXP USA Inc. BFU730F,115

RF TRANS NPN 2.8V 55GHZ 4DFP

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Infineon Technologies BFP420H6327XTSA1

RF TRANS NPN 5V 25GHZ SOT343

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