Bipolar RF Transistors

Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.

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Infineon Technologies BFP183WH6327XTSA1

RF TRANS NPN 12V 8.5GHZ SOT343-4

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Infineon Technologies BFR193FH6327XTSA1

RF TRANS NPN 12V 8GHZ TSFP-3

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Infineon Technologies BFP196WNH6327XTSA1

RF TRANS NPN 12V 7.5GHZ SOT343-4

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Infineon Technologies BFR193E6327HTSA1

RF TRANS NPN 12V 8GHZ SOT23-3

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Infineon Technologies BFR183E6327HTSA1

RF TRANS NPN 12V 8GHZ SOT23-3

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Infineon Technologies BFR193WH6327XTSA1

RF TRANS NPN 12V 8GHZ SOT323-3

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Toshiba Semiconductor and Storage 2SC5066-O,LF

RF TRANS NPN 12V 7GHZ SSM

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Infineon Technologies BFP196WH6327XTSA1

RF TRANS NPN 12V 7.5GHZ SOT343-4

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