Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation SD1332-05H
RF TRANS NPN 15V 5.5GHZ M150
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Microsemi Corporation SD1330-05H
RF POWER TRANSISTOR
0
Microsemi Corporation SD1309-01H
RF POWER TRANSISTOR
0
Microsemi Corporation SD1244-12H
RF POWER TRANSISTOR
0
Microsemi Corporation SD1244-09H
RF POWER TRANSISTOR
0
Microsemi Corporation SD1143-01
RF TRANS NPN 18V 175MHZ M113
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Microsemi Corporation SD1057-01H
RF POWER TRANSISTOR
0
Microsemi Corporation SD1019-02
RF POWER TRANSISTOR
0