Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation MSC72111H
RF POWER TRANSISTOR
0
Microsemi Corporation MSC1450A
RF TRANS 65V M216
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Microsemi Corporation MSC1175MA
RF TRANS NPN 65V 1.15GHZ M218
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Microsemi Corporation MSC1090M
RF TRANS 65V 1.15GHZ M220
0
Microsemi Corporation MS3456
RF POWER TRANSISTOR
0
Microsemi Corporation MS3455
RF POWER TRANSISTOR
0
Microsemi Corporation MS2874
RF POWER TRANSISTOR
0
Microsemi Corporation MS2870
RF POWER TRANSISTOR
0