Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation SD1019
RF TRANS NPN 35V 136MHZ M130
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Microsemi Corporation SD1015
RF TRANS NPN 18V 150MHZ M135
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Microsemi Corporation SD1013-20H
RF POWER TRANSISTOR
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Microsemi Corporation S200-50A
RF POWER TRANSISTOR
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Microsemi Corporation MSC86580
RF POWER TRANSISTOR
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Microsemi Corporation MSC80806
RF POWER TRANSISTOR
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Microsemi Corporation MSC80205
RF POWER TRANSISTOR
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Microsemi Corporation MSC74070
RF POWER TRANSISTOR
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