Bipolar RF Transistors
Bipolar RF Transistors are semiconductor devices with three terminals that are used to switch or amplify signals in equipment involving radio frequencies. Bipolar junction transistors are designed as either NPN or PNP, with characteristics of transistor type, collector-emitter breakdown voltage, transition frequency, noise figure, gain, power, DC current gain, and collector current.
Microsemi Corporation MS2502A
RF POWER TRANSISTOR
0
Microsemi Corporation MS2477
RF POWER TRANSISTOR
0
Microsemi Corporation MS2473A
RF POWER TRANSISTOR
0
Microsemi Corporation MS2396
RF POWER TRANSISTOR
0
Microsemi Corporation MS2392
RF POWER TRANSISTOR
0
Microsemi Corporation MS2356A
RF POWER TRANSISTOR
0
Microsemi Corporation MS2348
RF POWER TRANSISTOR
0
Microsemi Corporation MS2321A
RF POWER TRANSISTOR
0