IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Microsemi Corporation APTGLQ50VDA65T3G

POWER MODULE - IGBT

43.22

Microsemi Corporation APTGLQ50DDA65T3G

POWER MODULE - IGBT

43.22

Microsemi Corporation APTGLQ100DA120T1G

POWER MODULE - IGBT

43.16

Microsemi Corporation APTGT20TL601G

MOD IGBT 600V 32A SP1

43.13

Microsemi Corporation APTGT50DH60T1G

MOD IGBT 600V 80A SP1

43.1

Microsemi Corporation APT100GT120JR

IGBT 1200V 123A 570W SOT227

43.06

Microsemi Corporation APTGLQ25H120T2G

POWER MODULE - IGBT

43.02

Microsemi Corporation APTGL90DA120T1G

MOD IGBT 1200V 110A SP1

42.93