IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

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Vishay / Semiconductor - Diodes Division VS-GB70LA60UF

IGBT 600V 111A 447W SOT-227

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Vishay / Semiconductor - Diodes Division VS-GB50NA120UX

IGBT 1200V 84A 431W SOT-227

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Vishay / Semiconductor - Diodes Division VS-GB50LA120UX

IGBT 1200V 84A 431W SOT-227

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Vishay / Semiconductor - Diodes Division VS-GB100TP120U

IGBT 1200V 150A 735W INT-A-PAK

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Vishay / Semiconductor - Diodes Division VS-GB100DA60UP

MODULE IGBT SOT-227

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Vishay / Semiconductor - Diodes Division VS-GA200SA60SP

MODULE IGBT SOT-227

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Vishay / Semiconductor - Diodes Division VS-GA200HS60S1PBF

IGBT 600V 480A 830W INT-A-PAK

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Vishay / Semiconductor - Diodes Division VS-GA100TS60SFPBF

IGBT 600V 220A 780W INT-A-PAK

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