IGBT Modules

Insulated-gate bipolar transistors (IGBTs) are three-terminal power semiconductor devices primarily used as electronic switches that combine high efficiency and fast switching. As modules, IGBTs are configured as asymmetrical bridges, boost, buck and brake choppers, full-bridge, three-level and three-phase inverters. Some have built-in NTC thermistors for temperature monitoring. IGBT modules are differentiated by max power, collector current, collector-emitter breakdown voltage and configuration.

---

Vishay / Semiconductor - Diodes Division VS-GT400TH120N

IGBT 1200V 600A 2119W DIAP

0

Vishay / Semiconductor - Diodes Division VS-GT175DA120U

IGBT 1200V 288A 1087W SOT-227

0

Vishay / Semiconductor - Diodes Division VS-GT100TP120N

IGBT 1200V 180A 652W INT-A-PAK

0

Vishay / Semiconductor - Diodes Division VS-GT100DA120U

IGBT 1200V 258A 893W SOT-227

0

Vishay / Semiconductor - Diodes Division VS-GB75SA120UP

MODULE IGBT SOT-227

0

Vishay / Semiconductor - Diodes Division VS-GB75LP120N

IGBT 1200V 170A 658W INT-A-PAK

0

Vishay / Semiconductor - Diodes Division VS-GB75DA120UP

MODULE IGBT SOT-227

0

Vishay / Semiconductor - Diodes Division VS-GB70NA60UF

IGBT 600V 111A 447W SOT-227

0