Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXYH16N250C

IGBT 2500V 35A TO247AD

17.48

Infineon Technologies IGC99T120T8RLX1SA3

IGBT 1200V 100A DIE

17.4

IXYS IXGH25N120

IGBT 1200V 50A 200W TO247AD

19.42

IXYS IXBH24N170

IGBT 1700V 60A 250W TO247

19.29

IXYS IXBF40N160

IGBT 1600V 28A 250W I4PAC

19.25

IXYS IXGH48N60B3C1

IGBT 600V 75A 300W TO247

25.65

IXYS IXBT12N300HV

IGBT 3000V 30A 160W TO268

25.35

IXYS IXGH30N60C3C1

IGBT 600V 60A 220W TO247

24.95