Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXBX75N170A

IGBT 1700V 110A 1040W PLUS247

45.36

IXYS IXBK75N170A

IGBT 1700V 110A 1040W TO264

45.02

IXYS IXBX75N170

IGBT 1700V 200A 1040W PLUS247

44.69

Infineon Technologies IRGPF50F

IGBT FAST 900V 51A TO-247AC

0

Infineon Technologies IRGBC20FD2

IGBT W/DIODE 600V 16A TO-220AB

0

Infineon Technologies IRGBC30UD2

IGBT W/DIODE 600V 23A TO-220AB

0

IXYS IXGH17N100U1

IGBT 1000V 34A 150W TO247AD

0

IXYS IXGH10N100U1

IGBT 1000V 20A 100W TO247AD

0