Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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IXYS IXGH50N60A

IGBT 600V 75A 250W TO247AD

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Infineon Technologies IRG4BC20FD

IGBT 600V 16A 60W TO220AB

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IXYS IXGH32N60BU1

IGBT 600V 60A 200W TO247AD

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IXYS IXSH30N60CD1

IGBT 600V 55A 200W TO247AD

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Infineon Technologies IRG4IBC20W

IGBT 600V 11.8A 34W TO220FP

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Infineon Technologies IRG4BC40K

IGBT 600V 42A 160W TO220AB

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Infineon Technologies IRG4BC30W-S

IGBT 600V 23A 100W D2PAK

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Infineon Technologies IRG4BC20UD-S

IGBT 600V 13A 60W D2PAK

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