Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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STMicroelectronics STGWA75M65DF2

TRENCH GATE FIELD-STOP IGBT M SE

5.79

Infineon Technologies IKW30N65EL5XKSA1

IGBT 650V 30A FAST DIODE TO247-3

5.78

ON Semiconductor NGTB40N120FL2WG

IGBT 1200V 80A 535W TO247

5.57

ON Semiconductor HGTG30N60B3D

IGBT 600V 60A 208W TO247

5.43

ON Semiconductor FGH40T100SMD

IGBT 1000V 80A 333W TO247-3

5.34

Infineon Technologies IRGB4062DPBF

IGBT 600V 48A 250W TO220AB

5.33

ON Semiconductor FGH30S130P

IGBT 1300V 60A 500W TO-247AB

5.27

Infineon Technologies IKW40N65ES5XKSA1

IGBT TRENCH 650V 79A TO247-3

5.24