Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Microsemi Corporation APT70GR65B2SCD30

INSULATED GATE BIPOLAR TRANSISTO

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Microsemi Corporation APT45GR65SSCD10

INSULATED GATE BIPOLAR TRANSISTO

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Microsemi Corporation APT45GR65BSCD10

INSULATED GATE BIPOLAR TRANSISTO

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Infineon Technologies IRGIB4640DPBF

IGBT 600V 65A 250W TO220

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Infineon Technologies IRGIB4630DPBF

IGBT 600V 47A 206W TO220

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Infineon Technologies IRGR4607DTRPBF

IGBT 600V 11A 58W DPAK

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Infineon Technologies IRG8P75N65UD1PBF

G8 650V 75A CO-PAK-247

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Infineon Technologies IRG8P75N65UD1-EPBF

G8 650V 75A CO-PAK-247

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