Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG8P45N65UD1PBF

G8 650V 45A CO-PAK-247

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Infineon Technologies IRG8P45N65UD1-EPBF

G8 650V 45A CO-PAK-247

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Infineon Technologies IRG8CH42K10F

IGBT 1200V 40A DIE

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Infineon Technologies IRG8CH42K10D

IGBT 1200V 40A DIE

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Infineon Technologies IRG8CH29K10F

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG8CH29K10D

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG8CH20K10F

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG8CH20K10D

IGBT 1200V ULTRA FAST DIE

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