Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRG7CH81K10EF-R

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH81K10EF

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH75UEF-R

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH75UED-R

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH75K10EF-R

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH75K10EF

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH73UEF-R

IGBT 1200V ULTRA FAST DIE

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Infineon Technologies IRG7CH73UED-R

IGBT 1200V ULTRA FAST DIE

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