Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGS4630DTRRPBF

IGBT 600V 47A 206W D2PAK

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Infineon Technologies IRGS4630DTRLPBF

IGBT 600V 47A 206W D2PAK

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Infineon Technologies IRGS4630DPBF

IGBT 600V 47A 206W D2PAK

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Infineon Technologies IRGS4620DTRRPBF

IGBT 600V 32A 140W D2PAK

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Infineon Technologies IRGS4620DTRLPBF

IGBT 600V 32A 140W D2PAK

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Infineon Technologies IRGS4620DPBF

IGBT 600V 32A 140W D2PAK

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Infineon Technologies IRGS4615DTRRPBF

IGBT 600V 23A 99W D2PAK

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Infineon Technologies IRGS4615DTRLPBF

IGBT 600V 23A 99W D2PAK

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