Single IGBTs
Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.
ON Semiconductor NGTB40N120FLWG
IGBT 1200V 40A TO247
0
ON Semiconductor NGTB30N60IHLWG
IGBT 600V 30A TO247
0
ON Semiconductor NGTB30N120LWG
IGBT 1200V 30A TO247
0
ON Semiconductor NGTB30N120IHSWG
IGBT 1200V 30A TO247
0
ON Semiconductor NGTB30N120IHLWG
IGBT 1200V 30A TO247
0
ON Semiconductor NGTB20N60L2TF1G
IGBT 600V 20A TO3PF
0
ON Semiconductor NGTB25N120FLWG
IGBT 1200V 25A TO247-3
0
ON Semiconductor NGTB20N120IHSWG
IGBT 1200V 20A TO247
0