Single IGBTs

Single IGBTs (Insulated Gate Bipolar Transistors) are multilayered semiconductor devices with three terminals that can handle high currents and have fast switching features. They are characterized by type, collector-emitter breakdown voltage, collector current, pulsed collector current, VCE(ON), switching energy, and gate charge.

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Infineon Technologies IRGS4615DPBF

IGBT 600V 23A 99W D2PAK

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Infineon Technologies IRGS4610DTRRPBF

IGBT 600V 16A 77W D2PAK

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Infineon Technologies IRGS4610DTRLPBF

IGBT 600V 16A 77W D2PAK

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Infineon Technologies IRGS4610DPBF

IGBT 600V 16A 77W D2PAK

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Infineon Technologies IRGS4607DTRRPBF

IGBT 600V 11A 58W D2PAK

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Infineon Technologies IRGS4607DTRLPBF

IGBT 600V 11A 58W D2PAK

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Infineon Technologies IRGS4607DPBF

IGBT 600V 11A 58W D2PAK

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Infineon Technologies IRGR4610DTRRPBF

IGBT 600V 16A 77W DPAK

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